2004年

“Infra-red spectroscopic ellipsometry applied to the Characterizationof ultra-shallow junction silicon and SOI”,

B.Defranoux, T. Emeraud, S. Bourtault, J. Venturini, P. Boher, M. Hernandez,

C. Laviron, T. Noguchi, Thin Solid Film, 455, 150, 1, 2004.

“Effect of Thermal Annealing on Sputtered a-Si film”,

D.Y. kim, H.S. Cho, K.B. Park, J.Y. Kwon, J.S. Jung and T. Noguchi, J. of Korean Phys. Soc., 45, p.S847, 2004.

“SiO2 Film Formed Inductively Couples Plasma Chemical Vapor Deposition at Low Temperature for Poly-Si TFT”,

J.S. Jung, J.Y. Kwon, Y.S. Park, D.Y. kim,H.S. Cho, K.B. Park, W. Xianyu and T. Noguchi, J. of Korean Phys. Soc., 45, p.S861-863, 2004.

“Low Temperature Poly-Si TFT Technology”,

T. Noguchi, D.Y. Kim, J.Y. Kwon, K.B. Park, J.S. Jung, W.X. Xianyu, H.Y. Yin and H.S. Cho, Mat.Res.Soc.Symp.Proc., 814, p.8, 2004.

“High Quality Gate Insulator for Very-Low Temperature Poly-Si TFT Employing Nitrous Oxygen Plasm Pre-Treatment”,

M.Y. Shin, S.-M. Han, M.-C. Lee, H-S. Shin, and M.K. Han, J.-Y. Kwon, and T. Noguchi, Mat.Res.Soc.Symp.Proc., 814, I7.9, 2004.

“Lateral crystallization of amorphous silicon using Single Pulsed Excimer laser for Poly-Si TFT”

K. B. Park, H.S. Cho, H.Yin, J. Jung, D.Y. Kim, W. Xianyu , J. Y. Kwon, Y. Park, and T. Noguchi,

IDW’04, AMD5-4, p.315, 2004.

“Extreme Grain Growth of poly-Si film by Excimer Laser Annealing for sputtered a-Si film at room temperature”

D. Y. Kim, J. S. Jung, H. S. Cho, J. Y. Kwon, K. B. Park, H. Lim, and T. Noguchi,

IDW’04, AMDp-11, p.423, 2004.

“Nanocrystalline-Si Thin Film Deposited By ICP-CVD For Flexible Displays”

S.M Han, J.H. Park, H.J. Lee, M.K Han, J.Y. Kwon, and T. Noguchi, IDW’04, AMDp-36L, p.505, 2004.

“High quality SiO2 film formed by ICP CVD at low temperature for gate insulator in poly-Si TFT on plastic substrate”

Ji Sim Jung, Jang Yeon Kwon, Young Soo Park, Do Young Kim, Hans S. Cho1, Kyung Bae Park , Xianyu Wenxu , Hyuck Lim, Huaxiang Yin and Takashi Noguchi, AM-LCD04, TFTp4-L1,2004