2006年

“Tensile-Strained Single-Crystalline Si Film on Insulator”,

H.S. Cho, W.X. Xianyu, X.X. Zhang, H.X. Yin and T. Noguchi, Jap. Appl. Phys, 45, 7682-7684, 2006.

“A New Fin-like TFT fabrication by using LTPS”,

H.Y. Yin, W.X. Xianyu, J.S, IEEE Transaction on Ele. Dev. Lett, 27, p. 357-359, 2006.

“Ultra-Low Temperature Process by Ion Shower Doping Technique for Poly-Si TFT on Plastic”,

D.Y. Kim, J.Y. Kwon, J.S. Jung, K.B. Park, H.S. Cho, H. Lim, J.M. Kim, H.X. Yin, X. Zhang and T. Noguchi, J. of Korean Physical Society, 48, S51-54, 2006.

“Ultra Low Sheet Resistance on Poly Silicon Film by ELA”,

J.M. Kim, W.S. Hong, H. Lim, D.Y. Kim, J.S. Jung, J.Y. Kwon and T. Noguchi, J. of Korean Physical Society, 48, S47-50, 2006.

“Study of High-k Gate Oxide for Low-Temperature Poly-Si TFT”,

S. Jung, J.Y. Kwon, W.X. Xianyu, T. Noguchi, S.H. Jeong, S.W. Jeong, Y.H. Roh, J. of Korean Physical Society, 48, S32-34, 2006.

“Ultra-Low Temperature Poly-Si Thin Film Transistor for Plastic Substrate”,

S.H. Lee, W.A. Hong, J.M. Kim, H. Lim, K.B. Park, C.L. Cho, K.E. Lee, D.Y. Kim, J.S. Jung, J.Y. Kwon and T. Noguchi, J. of Korean Physical Society, 48, S61-63, 2006.

“Ultra-Low Temperature a-Si Thin Film deposition by Catarytic CVD and Laser Crystallization for Poly-Si TFT”,

D.Y. Kim, J.Y. Kwon, J.S. Jung, J.Y. Kwon, H.S. Cho, K.B. Park, H. Lim and T. Noguchi, Jap. J. Appl. Phys., 45, L227-229, 2006.

“Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate”,

D.Y. Kim, J.Y. Kwon, J.S. Jung, J.M. Kim, K.B. Park, H. Lim, , H.S. Cho, H.X. Yin, Jap. J. Appl. Phys., 45, L74-76, 2006.

“Low Temperature Process for Advanced Si TFT Technology”,

T. Noguchi, J.Y. Kwon, H. Lim, K.B. Park, J.S. Jung, D.Y. Kim, H.S. Cho, S.P.Kim, Y.S. Park, J.M. Kim, Jap. J. Appl. Phys., 45, 4321-4324, 2006.

“A new approach of poly-Si film on plastic substrate prepared by ion beam deposition (IBD) followed by Excimer laser crystallization at room temperature”,

J.Y. Kwon, H.Y. Yin, W.X. Xianyu, J.S. Jung, H.S. Cho, D.Y. Kim, K.B. Park, T. Noguchi, Jap. J. Appl. Phys., 45, 4362-4364, 2006.

“2.2 inch qqVGA AMOLED Drived by ultra low temperature poly silicon”,

J.Y. Kwon, J.S. Jung, K.B. Park, J.M. Kim, H. Lim, S.Y. Lee, J.M. Kim, T. Noguchi, J.H. Hur and J. Jang, Proc., SID’06 (Symposium Information and Display), 34.2, 2006.

“Effective ELA for Advanced Si TFT System on Insulator”

T. Noguchi, IMID/IDMC '06 DIGEST • 45, 3-1, IMID, 2006.

“FIN構造の薄膜トランジスタと機能３次元化”,

野口隆, 応用物理学会分科会　シリコンテクノロジー, 85, 2006

不純物ドープされたポリＳｉ薄膜のエキシマレーザアニールによる活性化,

野口隆, 第６７回秋季応用物理学会, 29p-ZQ-1, 2006.

“High quality gate formed by ICP CVD for U-LTPS TFT on plastic substrate”

J.S. Jung, K.B. Park, J.M. Kim, T. Noguchi, S.Y. Lee, J.Y. Kwon, AM-FPD’06, 3-2, p.23, 2006.

“Fabrication of Poly-Si TFTs in Array Patterns using Field Aided Lateral Crystallization Process”

T. S. Han, C.J. Park, H.C. Kim, H.P. Jeon, Y.B. Kim, T. Noguchi, D.K. Choi, AM-FPD’06, P-14, p.163, 2006

“Reliability Analysis of Ultra-Low-Temperature Poly-Si Thin Film Transistors”

H. Ueno, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J.S. Jung, K.B. Park, J.M. Kim, J.Y. Kwon, T. Noguchi, AM-FPD’06, P-22, p.191, 2006.

“Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature”

W. XIANYU, H. Se-young. CHO, J.Y. KWON, H. YIN, T. Noguchi, IEICE, Vol89, 10, p.1460-1464, 2006.

“Performance of ULTPS-TFT on plastic for AMOLED”

K. B. Park, J. S. Jung, J. Mon, Kim, J. Y. Kwon, H. Lim, T. Noguchi, ITC’2006, 2.2, p.6, 2006.

“Ultra Low Temperature (below 200℃) TFT Fabrication on Plastic substrates”

J. Y. Kwon, J. S. Jung, J. M. Kim, K. B. Park, H. Lim, T. Noguchi, ITC’2006, P6, p.94, 2006.

“Lower Temperature Process for Advanced Si TFT system using Excimer Laser Annealing”

T. Noguchi, J. Y. Kwon, K. B. Park, J. S. Jung, J. M. Kim, D. Y. Kim, H. Lim, W. Xianyu, H. S. Cho, H. Yin.

ITC’2006, 9.1, p.228, 2006.

“Study of tilted dopant implantation method for reducing leakage current on Poly-Silicon TFT”

H. Lim, K. B. Park, H. Yin, J. Y. Kwon, W. Xianyu, H. S. Cho, J. M. Kim, J. S. Jung, Y. S. Park, T. Noguchi,